Главная  Журналы 

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 [ 95 ] 96 97 98 99

140. Ouerst J. A. Calculation of High-Frequency Characteristics of Field-Effect Transistors. Solid-State Electronics, 1965, 8, June, p. 563-655 with ill.

141. Richer I. The Equivalent Circuit of an Arbitrarily Doped Field-Effect Transistor. Solid-State Electronics, 1965, 8, April, p. 381-393 with ill.

142. Trofimenkoff F. N., Reddy B. An FET Equivalent Circuit. Proc. IEEE, 1965, 53, April, p. 419 with ill.

143. Hauser J. R. Small-Signal Properties of Field-Effect Devices. IEEE Trans. Electron Devices, 1965, ED-12, December, p. 605-618 with ill.

144. Reddy В., Trofimenkoff P. N. FET High-Frequency Analysis. Proc lEE, 1966, 113, November, p. 1755-1762 with ill.

145. Paul R. Frequenzverhalten von Sperrschicht - Feldeffekttransistoren. Archiv. Electrischen Dbertragung, 1967, 21, May, p. 259-272 with ill.

146. Cobbold R. S. C, Silverthorn R. D., Trofimenkoff P. N. Theory and Application of the Field-Effect Transistor; p. 2, High-Frequency Properties. Proc. lEE, 1965, 112, April, p. 681-688 with ill.

147. Orebene A. B. Parasitic Bulk Resistances in Junction-Gate FETs. Proc. IEEE, lS67, 55, November, p. 2031-2032 with ill.

148. Deal B. E., Snow E. H., Mead C. A. Barrier Energies in Metal - Silicon Dioxide - Silicon Structures. J. Phys. Chem. Solids, 1966, 27, December, p. 1873-1879 with ill.

149. Deal B. E., Snow E. H. Barrier Energies in Mos-structures. IEEE Trans. Electron Devices, 1966, ED-13, August/September, p. 674.

150. Tamm I. On a Possible Manner of Electron Binding to Crystal Surfaces. Phys«k Z. Sowjet-union, 1932, 1, p. 733.

151. Shockley W. Surface States Associated with a Periodic Potential. Phys. Rev., 1939, 56, August, p. 317-323 with ill.

152. Many A., Goldstein Y., Grover N. B. Semiconductor Surfaces. Amsterdam, North-Holland, 1965, 230 p. with ill.

153. Prankl D. R., Electrical Properties of Sem.iconductor Surfaces. Oxford, Pergamon Press, 1967, 286 p. with ill.

154. Haneman C. Free Bonds in Semiconductors. Proc. Int. Conference on the Physics of Sem.iconductors, Institute of Physics, London, 1962, p. 842- 847 with ill.

155. Terman L. M. An Investigation of Surface States at a SiliconySilicon Oxide Interface Eploying Metal - Oxide - Silicon Diodes. Solid-State Electronics, 1962, 5, Semtember/October, p. 285-299 with ill.

156. Lehovec K., Slobodskoy A., Spragne J. Field-Effect Capacitance Analysis of Surface States on Silicon. Phys. Status Solidi, 1963, 3, March, p. 447- 464 with ill.

157. Zaininger G., Warfield G. Limitations of the MOS Capacitance Method for the Determ.ination of Sem.iconductor Surface Properties. IEEE Trans. Electron Devices, 1965, ED-12, April, p. 179-193 with ill.

158. Heiman P. P. The Effects of Oxide Traps on the MOS Capacitance. IEEE Trans. Electron Devices, 1965, ED-12, April, p. 167-178 with ill.

159. Whelan M. V. Influence of Charge Interactions on Capacitance Versus Voltage Curves in MOS-Structures. Philips Res. Repts., 1965, 20, October, p. 562-577 with ill.

160. Revesz A. G., Zaininger K- H. The Influence of Oxidation Rate and Heat Treatment on the Si Surface Potential in the Si - SiOa System. IEEE Trans. Electron Devices, 1966, ED-13, February, p. 246-255 with ill.

161. Rosier L. L. Surface States and Surface Recom.bination Velocity Characteristics of Si -SiOa Interfaces. IEEE Trans. Electron Devices, 1966, ED-13, February, p. 260-268 with ill.

" 162. Berglung C. H. Surface States at Steam-Grown Silicon - Silicon Dioxide Interfaces. IEEE Trans. Electron Devices, 1966, ED-13, October, p. 701-705 with ill.

163. Niccolian E. H., Goetzberger A. The Si -SiOz Interface Electrical Properties as Determined by the Metal - Insulator - Silicon Conductance Technique. Bell Syst. Tech. J., 1967, 46, July/August, p. 1055-1134 with ill.



164. Investigation of Thermally Oxidized Silicon Surfaces Using Metal - -Oxide - Sem.iconductor Structures. Solid-State Electronics, 1965 8 February p. 145-163 with ill. Auth: B. E. Deal, A. S. -Grove, C. T. Sah, e! H. Snow

165. Grove A. S. Physies and Technology of Semiconductor Devices New Yorl<, Wiley, 1967, p. 350 with ill.

166. Revesz A. G., Zaininger K. H. The Si - SiOa Solid - Solid Interface System. RCA Rev., 1968, 29, March, p. 22-76 with ill.

167. Schlegel E. S. A Bibliography of Metal - Insulator - Semiconductor Studies. IEEE Trans. Electron Devices, 1967, ED-14, November p 728-749 with ill, and 1968, ED-15, December, p. 951-954 with ill.

168. Thomas J. E., Young D. R. Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers. IBM J Res Dev., 1964, 8, September, p. 368-375 with ill.

169. Ion Transport Phenomena in Insulating Films. J. Appl. Phys., 1965, 36, Moy, p. 1664-1673 with ill. Auth.: B. E. Deal, A. S. Grove, C." T. Sah, E. H. Snow.

170. Characteristics of Surface-State Charge (Qss) of Therm.ally Oxidized Silicon. J. Electrochemical Soc, 1967, 114, March, p. 266-273 with ill. Auth.:

B. E. Deal, A. S. Grove, M. Sklar, E. H. Snow.

171. Hofstein S. R. An Investigation of Instability and charge Motion in Metal - Silicon Oxide - Silicon Structures. IEEE Trans. Electron Devices, 1966, ED-13, February, p. 222-237 with ill.

172. Hofstein S. R. Proton and Sodium Transport in SiOg Films. IEEE Trans. Electron Devices, 1967, ED-14, November, p. 749-759 with ill.

173. Stabilization of SiOa Passivation Layers with P2O5. IBM J. Res. Dev., 1964, 8, September, p. 376-384 with ill. Auth.: D. R. Kerr, J. S. Logan, P. J. Burkhardt, W. A. Piliskin.

174. Yamin JVl. Charge Storage Effects in Silicon Dioxide Films. IEEE Trans. Electron Devices, 1965, EEi-12, March, p. 88-96 with ill.

175. Lindmayer J., Reynolds J. H. Charge Distribution in Thermally Grown Silicon Dioxide. J. Appl. Phys.. 1966, 37, August, p. 3400-3404 with ill.

176. Williams R. Photoem.ission of Electrons from Silicon Dioxide. Effects of Ion Migration in the Oxide. J. Appl. Phys., 1966. 37, March, p. 1491- 1494 with ill.

" 177. Observations of Impurity Redistribution during Thermal Oxidation of Silicon using the MOS Structure. J. Electrochemical Soc, 1965, 112, March, p. 308-314 with ill. Auth.: В; E. Deal, A. S. Grove, E. H. Snow,

C. T. sah. .(

178. Brown W. L. n-Type Surface Conductivity on p-Type Germanium. Phys Rev. 1953, 91, August, p. 518-527 with ill.

179. Garrett C. G. В., Brattain W. H. Physical Theory of Semiconductor Surfaces. Phys. Rev., 1955, 99, July, p. 376-387 with ill.

180. Kingston R. H., Neustadter S. P. Calculation of Space Charge, Electric Field and Free Carrier Concentration at Surface of Semiconductor. J. Appl. Phys., 1955, 26, June, p. 718-720 with ill.

181. Young C. E. Extended Curves of the Space Charge, Electric Field and Free Carrier Concentration at the Surface of a Semiconductor, and Curves of Electrostatic Potential Inside a Semiconductor. J. Appl. Phys., 1961, 32, March, p. 329-332 with ill.

182. Dousmanis C. G., Duncan R. C. Calculations of the Shape and Extent of Space Charge Regions in Semiconductor Surfaces. J. Appl. Phys., 1958, 29, Decem.ber, p. 1627-1629 with ill.

183. Green W., Seiwatz R. Space Charge Calculations for Semiconductors. J. Appl. Phys., 1958, 29, July, p. 1034-1040 with ill.

184. Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide- Semiconductor Structures. J. Appl. Phys., 1964, 35, August, p. 2458-2460. Auth.: B. E. Deal, A. S. Grove, E. H. Snow, C. T. Sah.

185. Bath H. M., Cutler M. Barrier Height Measurement by means of Surface Capacitance. Bull. Am. Phys. Soc, 1958, 3, ser. 2, p. 138.



186. Moll J. L. Variable Capacitance with Large Capacity change. IRE Wescon Convention Record, 1959, 3, p. -3, August, p. 32-36 with ill.

187. Pfann W. 0., Garrett C. G. B. Semiconductor Varactors using Surface Space-Charge Layers. Proc. IRE, 1959, 47, November, p. 2011-2012 with ill.

189. Frank! D. R. Some Effects of Material Param.eters on the Design of Surface Space-Charge Varactors. Solid-State Electronics, 1961, 2, January, p. 71-76 with ill.

189. Goetzberger A. Ideal MOS-Curves for Silicon. Bell Syst. Tech. J., 1966, 45, September, p. 1097-1122 with ill.

190. Whelan M. V. Graphical Relations between Surface Parameters of Silicon, to be used in connection with MOS-Capacitance Measurements. Philips. Res. Repts., 1965, 20, October, p. 620-632 with ill.

191. Fortani F., Minnaja N., Pagiola E. Equivalent circuit of a Metal - insulator - Sem.iconductor Structure. Solid-State Electronics, 1967, 10, January, p. 9-20 with ill.

192. Lehovec K., Slobodskoy A. Im.pedance of Semiconductor - Insulator - Metal Capacitors. Solid-State Electronics, 1964, 7, January, p. 59-79 with ill. i,

193. Hal! R., White J. P. Surface Capacity of Oxide Coated Semiconductors.. Solid-State Electronics, 1965, 8, March, p. 211-226 with ill.

194. Jund C, Poirier R. Carrier Concentration and Minority Carrier Lifeti-m.e Measurement in Semiconductor Epitaxial Layers by the MOS-Capacitance Method. Solid-State Electronics, 1966, 9, April, p. 315-320 with ill.

195. Gupta D. C, Anantha N. G. Measurement of Epitaxial Layer Resistivity using MO§-Capacitance Method. Proc. IEEE, 1967, 55, June, p. 1108 with ill.

196. Experimental Study of Semiconductor Surface Conductivity. Surface Science, 1966, 5, September, p. 48-80, with ill. Auth.: J. Grosvalet, C. Jund, C. Motsch, R. Poirier.

197. Zerbst M. Relaxation Effects in Semiconductor - Insulator Interfaces. Z. Angew. Phys., 1967, 22, January, p. 30-33 with ill.

198. Hofstein S. R. Minority Carrier Lifetime Determination from Inversion Layer Transient Response. IEEE Trans. Electron Devices, 1967, ED-14, November,, p. 785-786 with ill.

199. Preire H. Different Mechanisms Affecting the Inversion Layer Transient Response. IEEE Trans. Electron Devices, 1968, ED-15, December, p. 990-997 with ill.

200. Hofstein S. R., Warfield G. Physical Limitations on the Frequency Response of a Semiconductor Surface Inversion Layer. Solid-State Electronics, 1965, 8, March, p. 321-341 with ill.

201. Hofstein S. R., Zaininger K. H., Warfield G. Frequency Response of the Surface Inversion Layer in Silicon. Proc. IEEE, 1964, 52, August, p. 971-972 with ill.

202. Nicollian E. H., Goetzberger A. Lateral A. C. Current Flow Model for Metal - Insulator - Semiconductor Capacitors. IEEE Trans. Electron Devices, 1965, ED-12, March, p. 108-117 with ill.

203. Mowery V. O. Theoretical Surface Conductivity Changes and Space charge in Germanium and Silicon. J. Appl. Phys., 1958, 29, December, p. 1753-1757 with ill.

204. Albers W. A., Thomas J. E. Observations of Surface Transverse Magneto-Resistance Effects on n-Type Germanium. J. Phys. Chem.. Solids, 1960, 14, July, p. 181-185 with ill.

205. Schrieffer J. R. Effective Carrier Mobility on Surface Space Charge Layers. Phys. Rev., 1955, 97, February, p. 641-646 with ill.

2D6. Schrieffer J.- R. P. 55-69 with ill.-In: „Semiconductor Surface Physics". Philadelfia, University of Pennsilvania Press, 1957.

207. Petritz R. L. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface. Phys. Rev., 1958, 110, June, p. 1254-1262 with ill.





0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 [ 95 ] 96 97 98 99